Produktinformationen zum reinen SiC-Leistungsmodul BSM300D12P2E001 mit 1200 V/300 A

1200V/300A full SiC power module expanded lineup

Product Overview

BSM300D12P2E001

In addition to 120A and 180A full SiC power modules, ROHM now offers a 300A type (BSM300D12P2E001)that enables support for larger power applications such as high capacity power supplies industrial equipment.
Moreover, significantly reduced switching loss (compared with conventional Si IGBT modules) makes high-frequency operation possible, ensuring compatibility with smaller peripheral components and cooling systems.

Lineup

New 300A SiC power module added to the lineup
Part No. Absolute Maximum Ratings (Ta=25°C) RDS
(ON)
(mΩ)
Pack
age
Ther
mistor
Internal Circuit Diagram
VDS
(V)
ID
(A)
(Tc=
60°C)
Tj
(°C)
Tstg
(°C)
Visol
(V)
(AC
1min.)
BSM080D12P2C008
(2G. DMOS)
1200 80 -40 to
+175
-40 to
+125
2500 34 C
type
- Internal Circuit Diagram(BSM120D12P2C005)
BSM120D12P2C005
(2G. DMOS)
120 -40 to
+150
20 Internal Circuit Diagram(BSM120D12P2C005)
BSM180D12P3C007
(3G.UMOS -Trench Gate)
180 -40 to
+175
10 Internal Circuit Diagram(BSM120D12P2C005)
BSM300D12P2E001
(2G. DMOS)
300 -40 to
+175
7.3 E
type
Internal Circuit Diagram(BSM300D12P2E001)
External Dimensions (Unit: mm)
C type E type
C type E type

■ Future developments

Larger current, Higher voltage

Our lineup has been expanded to include a new model that achieves higher rated current through the use of an SiC device that adopts a trench structure and a high voltage module.

Features1:High frequency operation achieved through reduced switching loss.

Reduced switching loss enables higher frequency operation

Switching loss is significantly reduced compared with similarly rated IGBT modules. As a result, simply replacing IGBT modules makes it possible to reduce the size of cooling countermeasures and support the use of smaller external components such as coils and capacitors by enabling higher frequency operation.

Features2:Safer design supports larger currents

Internal Circuit Diagram
  • Original design technology reduces inductance by half, enabling the development of 300A rated products
  • Integrated thermistor prevents excessive heat generation