Microwire-BUS 4 kbit (256x16 Bit), EEPROM - BR93G66FVM-3B

BR93G66-3B ist ein serieller EEPROM der 3-reihigen seriellen Schnittstellenmethode.
Sie haben eine 16 Bit-Organisation, und CS PIN ist der dritte PIN in ihrer PIN-Konfiguration.

* Dieses Produkt entspricht der STANDARD-Güte und wird nicht für Fahrzeugteile empfohlen.
Minimale Gehäusemenge
BR93G66FVM-3BGTTR Active MSOP8 3000 3000 Taping Ja
Grade Standard
I/F MicroWire BUS(3-Wire)
Density [bit] 4K
Bit Format [Word x Bit] 256 x 16
Package MSOP8
Operating Temperature (Min.)[°C] -40
Operating Temperature (Max.)[°C] 85
Vcc(Min.)[V] 1.7
Vcc(Max.)[V] 5.5
Circuit Current (Max.)[mA] 3.0
Standby Current (Max.)[μA] 2.0
Write Cycle (Max.)[ms] 5.0
Input Frequency (Max.)[Hz] 3M
Endurance (Max.)[Cycle] 106
Data Retention (Max.)[Year] 40
Comment Pin rotated type. Cu wire bonding.
  • ・ 3-line communications of chip select, serial clock, serial data input / output (the case where input and output are shared)
    ・ Actions available at high speed 3MHz clock (4.5V ~ 5.5V)
    ・ High speed write available (write time 5ms max.)
    ・ Same package and pin layout from 1Kbit to 16Kbit
    ・ 1.7~5.5V single power source action
    ・ Address auto increment function at read action
    ・ Write mistake prevention function » Write prohibition at power on » Write prohibition by command code » Write mistake prevention function at low voltage
    ・ Program cycle auto delete and auto end function
    ・ Program condition display by READY / BUSY
    ・ Compact package SOP8/SOP-J8/SSOP-B8/TSSOP-B8/MSOP8/ TSSOP-B8J/DIP-T8/VSON008X2030
    ・ Data retention for 40 years
    ・ Data rewrite up to 1,000,000 times
    ・ Data at shipment all addresses FFFFh
Weitere neue/aktualisierte Produkte im Zusammenhang mit Speicher
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Technische Daten
Thermal Resistance

The definition and how to use thermal resistance and thermal characterization parameter of packages for ROHM’s integrated circuit are described in this application note.