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4 V Antriebs-Nch+SBD-MOSFET - ES6U3

 
Empfohlene Produkte
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Spezifikationen:
Teilenummer ES6U3T2CR
Status NRND
Gehäuse WEMT6
Einheitenmenge 8000
Minimale Gehäusemenge 8000
Gehäusetyp Taping
Liste der enthaltenen Materialien Anfrage
RoHS Ja
Grade Standard
Package Code SOT-563T
JEITA Package SC-120
Package Size[mm] 1.6x1.6(t=0.6)
Number of terminal 6
Polarity Nch+Schottky
Drain-Source Voltage VDSS[V] 30
Drain Current ID[A] 1.4
RDS(on)[Ω] VGS=4V (Typ.) 0.27
RDS(on)[Ω] VGS=4.5V (Typ.) 0.25
RDS(on)[Ω] VGS=10V (Typ.) 0.17
RDS(on)[Ω] VGS=Drive (Typ.) 0.27
Total gate charge Qg[nC] 1.4
Power Dissipation (PD)[W] 0.7
Drive Voltage[V] 4.0
Reverse voltage VR (Diode) [V] 20.0
Forward Current IF (Diode) [A] 0.5
Forward Current Surge Peak IFSM (Diode) [A] 2.0
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
Pin-Konfigurierung:
Pin Configration
 
 
Technische Daten
NE Handbook Series

For Power Device

Storage Conditions

For Transistors

Condition Of Soldering

For Surface Mount Type

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Taping Specifications

For Transistors

Part Explanation

For Transistors