4 V Antriebs-Nch+SBD-MOSFET - ES6U3

Data Sheet

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Teilenummer	ES6U3T2CR
Status	NRND
Gehäuse	WEMT6
Einheitenmenge	8000
Minimale Gehäusemenge	8000
Gehäusetyp	Taping
Liste der enthaltenen Materialien	Anfrage
RoHS	Ja
Grade	Standard
Package Code	SOT-563T
JEITA Package	SC-120
Package Size[mm]	1.6x1.6(t=0.6)
Number of terminal	6
Polarity	Nch+Schottky
Drain-Source Voltage VDSS[V]	30
Drain Current ID[A]	1.4
RDS(on)[Ω] VGS=4V (Typ.)	0.27
RDS(on)[Ω] VGS=4.5V (Typ.)	0.25
RDS(on)[Ω] VGS=10V (Typ.)	0.17
RDS(on)[Ω] VGS=Drive (Typ.)	0.27
Total gate charge Qg[nC]	1.4
Power Dissipation (PD)[W]	0.7
Drive Voltage[V]	4.0
Reverse voltage VR (Diode) [V]	20.0
Forward Current IF (Diode) [A]	0.5
Forward Current Surge Peak IFSM (Diode) [A]	2.0
Mounting Style	Surface mount
Storage Temperature (Min.)[°C]	-55
Storage Temperature (Max.)[°C]	150

Pin-Konfigurierung:

Technische Daten

For Power Device

For Surface Mount Type

About TR Die Temperature

Before using ROHM Transistor

For Transistors