Downloading...

10 V Antriebs-Nch-MOSFET - R6046FNZ1

Nch 600 V 46 A Power MOSFET

* Dieses Produkt entspricht der STANDARD-Güte und wird nicht für Fahrzeugteile empfohlen.
Teilenummer
Status
Gehäuse
Einheitenmenge
Minimale Gehäusemenge
Gehäusetyp
RoHS
R6046FNZ1C9 Active TO-247 450 450 Bulk Ja
 
Spezifikationen:
Grade Standard
Package Code TO-247
Number of terminal 3
Polarity Nch
Drain-Source Voltage VDSS[V] 600
Drain Current ID[A] 46.0
RDS(on)[Ω] VGS=10V (Typ.) 0.075
RDS(on)[Ω] VGS=Drive (Typ.) 0.075
Total gate charge Qg[nC] 150.0
Power Dissipation (PD)[W] 120.0
Drive Voltage[V] 10.0
Trr (Typ.)[ns] 143
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
Eigenschaften:
  • 1) Low on-resistance.
    2) Fast switching speed.
    3) Gate-source voltage(VGSS)guaranteed to be ±30V.
    4) Drive circuits can be simple.
    5) Parallel use is easy.
    6) Pb-free lead plating; RoHS compliant.
 
 
 
 
Technische Daten
Reference Circuit

PFC Diode-Bridge-Less Half-Bridge Pin=10kW

Reference Circuit

PFC Diode-Bridge-Less Half-Bridge Pin=15kW

Reference Circuit

PFC Diode-Bridge-Less Half-Bridge Pin=5kW

SPICE Simulation Evaluation Circuit Data

PFC Diode-Bridge-Less Half-Bridge Pin=10kW

SPICE Simulation Evaluation Circuit Data

PFC Diode-Bridge-Less Half-Bridge Pin=15kW

SPICE Simulation Evaluation Circuit Data

PFC Diode-Bridge-Less Half-Bridge Pin=5kW

NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors