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10 V Antriebs-Nch-MOSFET - RDD023N50 |
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Spezifikationen:
| Teilenummer | RDD023N50TL |
| Status | NRND |
| Gehäuse | CPT3 |
| Einheitenmenge | 2500 |
| Minimale Gehäusemenge | 2500 |
| Gehäusetyp | Taping |
| Liste der enthaltenen Materialien | Anfrage |
| RoHS | Ja |
| Grade | Standard |
| Package Code | TO-252 |
| JEITA Package | SC-63 |
| Package Size[mm] | 6.5x9.5(t=2.3) |
| Number of terminal | 3 |
| Polarity | Nch |
| Drain-Source Voltage VDSS[V] | 500 |
| Drain Current ID[A] | 2.0 |
| RDS(on)[Ω] VGS=4V (Typ.) | 4.1 |
| RDS(on)[Ω] VGS=10V (Typ.) | 4.0 |
| RDS(on)[Ω] VGS=Drive (Typ.) | 4.1 |
| Total gate charge Qg[nC] | 11.0 |
| Power Dissipation (PD)[W] | 20.0 |
| Drive Voltage[V] | 4.0 |
| Mounting Style | Surface mount |
| Storage Temperature (Min.)[°C] | -55 |
| Storage Temperature (Max.)[°C] | 150 |
Pin-Konfigurierung:
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Technische Daten
NE Handbook Series
For Power Device
Taping Specifications
For Transistors
Condition Of Soldering
For Surface Mount Type
Storage Conditions
For Transistors
Operation Notes
About TR Die Temperature
Operation Notes
Before using ROHM Transistor
Part Explanation
For Transistors