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1,2 V Antriebs-Nch-MOSFET - RUQ050N02

 
Empfohlene Produkte
Teilenummer Status Datenblatt Gehäuse Pin kompatibel
RQ6C050UN Under Development TSMT6
RUL035N02 Active TUMT6
 
 
Spezifikationen:
Teilenummer RUQ050N02TR
Status NRND
Gehäuse TSMT6
Einheitenmenge 3000
Minimale Gehäusemenge 3000
Gehäusetyp Taping
Liste der enthaltenen Materialien Anfrage
RoHS Ja
Grade Standard
Package Code SOT-457T
JEITA Package SC-95
Package Size[mm] 2.9x2.8(t=1.0max.)
Number of terminal 6
Polarity Nch
Drain-Source Voltage VDSS[V] 20
Drain Current ID[A] 5.0
RDS(on)[Ω] VGS=1.5V (Typ.) 0.04
RDS(on)[Ω] VGS=2.5V (Typ.) 0.027
RDS(on)[Ω] VGS=4.5V (Typ.) 22.0
RDS(on)[Ω] VGS=Drive (Typ.) 0.04
Total gate charge Qg[nC] 12.0
Power Dissipation (PD)[W] 1.25
Drive Voltage[V] 1.5
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
Pin-Konfigurierung:
Pin Configration
 
 
Technische Daten
NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Condition Of Soldering

For Surface Mount Type

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors