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4 V Antriebs-Pch-MOSFET - RW1E015RP

 
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Spezifikationen:
Teilenummer RW1E015RPT2R
Status NRND
Gehäuse WEMT6
Einheitenmenge 8000
Minimale Gehäusemenge 8000
Gehäusetyp Taping
Liste der enthaltenen Materialien Anfrage
RoHS Ja
Grade Standard
Package Code SOT-563T
JEITA Package SC-120
Package Size[mm] 1.6x1.6(t=0.6)
Number of terminal 6
Polarity Pch
Drain-Source Voltage VDSS[V] -30
Drain Current ID[A] -1.5
RDS(on)[Ω] VGS=4V (Typ.) 0.19
RDS(on)[Ω] VGS=4.5V (Typ.) 0.17
RDS(on)[Ω] VGS=10V (Typ.) 0.115
RDS(on)[Ω] VGS=Drive (Typ.) 0.19
Total gate charge Qg[nC] 3.2
Power Dissipation (PD)[W] 0.7
Drive Voltage[V] -4.0
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
Pin-Konfigurierung:
Pin Configration
 
 
Technische Daten
NE Handbook Series

For Power Device

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Taping Specifications

For Transistors

Storage Conditions

For Transistors

Condition Of Soldering

For Surface Mount Type

Part Explanation

For Transistors