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NPN-Transistor niedriges VCE(sat) + Schottky-Diode - US5L10

 
Empfohlene Produkte
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Spezifikationen:
Teilenummer US5L10TR
Status NRND
Gehäuse TUMT5
Einheitenmenge 3000
Minimale Gehäusemenge 3000
Gehäusetyp Taping
Liste der enthaltenen Materialien Anfrage
RoHS Ja
Grade Standard
Package Code SOT-353T
JEITA Package SC-113CA
Package Size[mm] 2.0x2.1(t=0.85Max.)
Number of terminal 5
Polarity NPN+Di
Collector-Emitter voltage VCEO1[V] 12.0
Collector current(continuous) IC1[A] 1.5
Collector Power dissipation PC[W] 0.4
hFE 270 to 680
hFE (Min.) 270
hFE (Max.) 680
hFE (Diode) 25
Reverse voltage VR (Diode) [V] 20.0
Forward Current IF (Diode) [A] 0.7
Forward Current Surge Peak IFSM (Diode) [A] 3.0
Mounting Style Surface mount
Equivalent (Single Part) 2SD2652 / RB461F
Storage Temperature (Min.)[°C] -40
Storage Temperature (Max.)[°C] 125
Pin-Konfigurierung:
Pin Configration
 
 
Technische Daten
NE Handbook Series

For Power Device

Storage Conditions

For Transistors

Condition Of Soldering

For Surface Mount Type

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Taping Specifications

For Transistors

Part Explanation

For Transistors