The Industry's First SiC Trench MOSFET and Schottky Barrier Modules for Vehicle Motors
ROHM Co., Ltd. has recently announced the development of 600V/450A SiC (silicon carbide)-trench MOSFET and SiC SBD (Schottky barrier diode) modules. The modules makes it possible to reduce its volume less than roughly 50% compared with conventional silicon module and can operate in high-temperature environments up to 200ºC, making it possible to integrate directly into motors in vehicles and other applications.
The power electronics sector is experiencing explosive growth, due in large part to the emergence of hybrid and electric vehicles (HEVs and EVs). Improving the conversion rate of electrical energy to mechanical energy during operation (driving) has become an increasingly important issue. An ideal solution is incorporating electronic components and circuitry directly into the motor in order to drive the motor and to reduce the control loss. However, the interior of the motor can reach temperatures up to 200ºC, making it impossible to use today's conventional silicon modules.
ROHM solves this dilemma by offering the industry's first SiC Trench MOSFET and SBD modules compatible with temperatures greater than 200ºC, making it ideal for use in motors as well as industrial equipment. In addition, the use of SiC has resulted in a reduction in size, eliminating the need for external cooling systems. Power density is also increased and rises in element temperature controlled, enabling heat dissipation not only from the rear but from the front as well. This high temperature capability, combined with low-loss at high switching speeds, make ROHM's SiC modules the ideal choice for applications exposed to high temperatures as well as sets requiring low switching loss.
ROHM SiC modules will be exhibited at CEATAC 2010, from October 5th through 9th, at the Makuhari Messe convention center in Chiba Prefecture.
|600V/450A SiC Trench MOSFET Module||600V/450A 6-Element Diode Module|
|Static Characteristics at 225ºC||Forward characteristics at room temperature and high temperatures|
A composite semiconductor with outstanding physical values, including a bandgap approx. three times that of silicon, a dielectric breakdown field ten times greater, and thermal conductivity better. These properties make it suitable for power devices and high-temperature operation.
MOSFET(Metal Oxide Semiconductor Field Effect Transistor)
A type of transistor used for amplifying or switching electronic signals.
SBD(Schottky Barrier Diode)
A special type of diode with extremely low forward voltage drop and very fast switching operation.
It is characterized by the use of a metal semiconductor junction.
A "trench" refers to a groove. In this configuration a groove (trench) is formed on the chip surface and a MOSFET gate is formed alongside. The JFET resistance that is structurally present in planar type MOSFETs is not present here. In addition, since it is possible to make this smaller than a planar configuration, ON-resistance close to the inherent performance of the SiC material can be expected.
The resistance value during operation of a power element. This is the most important parameter affecting the capabilities of power MOSFETs. The smaller the value, the higher the performance.
This denotes technology for converting electrical power (power) into a convenient form and controlling it using semiconductor devices (electronics). It is applied to virtually all electronic products, including household appliances, industrial equipment, and is essential to modern life.
Note: Eisuke Masada and Kazuyuki Kusumoto, Power Electronics, Ohmsha
Hybrid Electric Vehicle(HEV)
This refers to cars with a power source that combines a fuel engine with an electric motor. Switching is performed based on conditions. The overall efficiency is roughly equivalent to electric and fuel-cell cars. As a result, they have received attention as practical vehicles with a low carbon footprint.
Cars that operate on electric power. These types of vehicles use a secondary battery (or, rarely, a primary battery) as a power source and can obtain power through external charging or battery exchange.