Trench MOS Structure, 100V, 20A, TO-263AB, Highly Efficient SBD for Automotive - RBLQ20NB10CFH (In der Entwicklung)

The RBLQ20NB10CFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.

Teilenummer | RBLQ20NB10CFHTL
Gehäuse | LPDL
Einheitenmenge | 1000
Minimale Gehäusemenge | 1000
Gehäusetyp | Taping
RoHS | Ja

Spezifikationen:

Grade

Automotive

Common Standard

AEC-Q101 (Automotive Grade)

Configuration

C-Common

Package Code

TO-263AB

Package Size[mm]

15.1x10.1(t=4.7)

Mounting Style

Leaded type

Number of terminal

3

VRM[V]

100

Reverse Voltage VR[V]

100

Average Rectified Forward Current IO[A]

20.0

IFSM[A]

150.0

Forward Voltage VF(Max.)[V]

0.71

IF @ Forward Voltage [A]

10.0

Reverse Current IR(Max.)[mA]

0.07

VR @ Reverse Current[V]

100

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

Eigenschaften:

  • High reliability
  • Power mold type
  • Cathode common dual type
  • Low VF and low IR