Trench MOS Structure, 100V, 30A, TO-263AB, Highly Efficient SBD - RBLQ30NB10S (In der Entwicklung)

The RBLQ30NB10S is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.

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Teilenummer | RBLQ30NB10STL
Gehäuse | LPDL
Einheitenmenge | 1000
Minimale Gehäusemenge | 1000
Gehäusetyp | Taping
RoHS | Ja

Spezifikationen:

Grade

Standard

Configuration

Single

Package Code

TO-263AB

Package Size[mm]

15.1x10.1(t=4.7)

Mounting Style

Leaded type

Number of terminal

3

VRM[V]

100

Reverse Voltage VR[V]

100

Average Rectified Forward Current IO[A]

30.0

IFSM[A]

200.0

Forward Voltage VF(Max.)[V]

0.86

IF @ Forward Voltage [A]

30.0

Reverse Current IR(Max.)[mA]

0.15

VR @ Reverse Current[V]

100

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

Eigenschaften:

  • High reliability
  • Power mold type
  • Low VF and low IR