Trench MOS Structure, 100V, 2A, SOD-123FL, Highly Efficient SBD - RBLQ2MM10 (In der Entwicklung)

The RBLQ2MM10 is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.

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Teilenummer | RBLQ2MM10TR
Gehäuse | PMDU
Einheitenmenge | 3000
Minimale Gehäusemenge | 3000
Gehäusetyp | Taping
RoHS | Ja

Spezifikationen:

Grade

Standard

Configuration

Single

Package Code

SOD-123FL

Package(JEITA)

SC-109B

Package Size[mm]

3.5x1.6 (t=0.8)

Mounting Style

Surface mount

Number of terminal

2

VRM[V]

100

Reverse Voltage VR[V]

100

Average Rectified Forward Current IO[A]

2.0

IFSM[A]

30.0

Forward Voltage VF(Max.)[V]

0.77

IF @ Forward Voltage [A]

2.0

Reverse Current IR(Max.)[mA]

0.01

VR @ Reverse Current[V]

100

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Eigenschaften:

  • High reliability
  • Small power mold type
  • Low VF and low IR