YQ20BGE10SD (Neues Produkt)
Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD
YQ20BGE10SD (Neues Produkt)
Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD
The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications. A miniaturized, thin and wireless TO-252 package.
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Produktdetails
Spezifikationen:
Configuration
Single
Package Code
TO-252 (DPAK)
Package(JEITA)
SC-63
Mounting Style
Surface mount
Number of terminal
3
VRM[V]
100
Reverse Voltage VR[V]
100
Average Rectified Forward Current IO[A]
20
IFSM[A]
150
Forward Voltage VF(Max.)[V]
0.86
IF @ Forward Voltage [A]
20
Reverse Current IR(Max.)[mA]
0.08
VR @ Reverse Current[V]
100
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Package Size [mm]
6.6x10 (t=2.4)
Eigenschaften:
- High reliability
- Power mold type
- Low VF and low IR
- Low capacitance
