GaN HEMT

GaN HEMT

GaN (Gallium Nitride) is a compound semiconductor material used in next-generation power devices. It is beginning to see adoption due to its superior properties over silicon devices, such as excellent high-frequency characteristics.
Due to its higher switching characteristics and lower ON resistance than silicon devices, GaN devices are expected to contribute to lower power consumption and greater miniaturization of various power supplies and the miniaturization of peripheral components.

Rohm succeeded to increase the gate withstand voltage (rated gate-source voltage) to an industry-leading 8V, making them ideal for use in power supply circuits for industrial equipment such as base stations and data centers along with IoT communication devices.

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