RB160VAM-60
60V, 1A, Schottky-Diode
RB160VAM-60
60V, 1A, Schottky-Diode
RB160VAM-60 ist die herkömmliche Schottky-Diode für die allgemeine Gleichrichtung.
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Produktdetails
Spezifikationen:
Configuration
Single
Package Code
SOD-323HE
Package(JEITA)
SC-108B
Mounting Style
Surface mount
Number of terminal
2
VRM[V]
60
Reverse Voltage VR[V]
60
Average Rectified Forward Current IO[A]
1
IFSM[A]
5
Forward Voltage VF(Max.)[V]
0.43
IF @ Forward Voltage [A]
0.1
Reverse Current IR(Max.)[mA]
0.04
VR @ Reverse Current[V]
60
Tj[℃]
150
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Package Size [mm]
2.5x1.4 (t=0.8)
Eigenschaften:
- Small power mold type (TUMD2M)
- High reliability
- Low VF
Referenzdesign / Anwendungsevaluierungskit
-
- Evaluation Board - BD7J200EFJ-EVK-001
Isolated Fly-back DCDC Converter, Input 48Vdc, Output 5V, 2.4A
-
- Reference Design - REF68006
- SCZ4009KTAHRC23-EVK-A09 Three Phase Inverter Evaluation Board
This SCZ4009KTAHRC23-EVK-A09 provides detailed specifications for a 3-phase inverter that utilizes Silicon Carbide (SiC) MOSFETs.
The SCZ4009KTAHRC23-EVK-A09 is a reference design platform for evaluating a three-phase inverter system utilizing ROHM's 4th Generation SiC MOSFETs in a DOT-247 package. This evaluation kit includes a power board, gate drive board, and sensing board, offering a comprehensive solution for high-efficiency power conversion applications upto 10kVA. This reference design includes comprehensive design resources such as schematics, bill of materials (BOM), and PCB layout files. It features a reference board built with DOT-247 package SiC MOSFETs, optimized for high-performance three-phase inverter applications.
We encourage to explore the advanced control capabilities of this EVK and consider its integration into your future power electronics development projects.
The product page for SCZ4009KTAHR will be prepared and provided separately.
