BM3G005MUV-LB
Nano Cap™, EcoGaN™, 650V 50mΩ 2MHz, GaN HEMT Power Stage IC
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BM3G005MUV-LB
Nano Cap™, EcoGaN™, 650V 50mΩ 2MHz, GaN HEMT Power Stage IC
Die Einstellung von Produkten (EOL) wurde angekündigt.
Produktdetails
Spezifikationen:
Vin (Min.)[V]
-0.6
Vin (Max.)[V]
30
Operating Current@500 kHz(Typ) [mA]
2.2
Quiescent Current (Typ) [μA]
180
Switching Frequency(Max)[MHz]
2
Turn-on Delay Time(Typ)[ns]
14
Turn-off Delay Time(Typ)[ns]
19
Temperature (Min.)[°C]
-40
Temperature (Max.)[°C]
105
ON State Resistance(Typ)[mΩ]
50
Package Size [mm]
8.0x8.0 (t=1.0)
Application
Networking, Server
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Min.)[°C]
150
Eigenschaften:
- Nano Cap™ Integrated 5V LDO
- Wide Operating Range for VDD Pin Voltage
- Wide Operating Range for IN Pin Voltage
- Low VDD Quiescent and Operating Current
- Low Propagation Delay
- High dv/dt Immunity
- Adjustable Gate Drive Strength
- Power Good Signal Output
- VDD UVLO Protection
- Thermal Shutdown Protection
Referenzdesign / Anwendungsevaluierungskit
-
- Evaluation Board - BM3G005MUV-EVK-003
The BM3G005MUV-EVK-003 evaluation board consists of the BM3G005MUV (GaN FET (650 V 50 mΩ), integrated driver and protection circuit) and A board on which peripheral components are mounted. This IC is designed to adapt major exist controllers, so that it also can be used to replace the traditional discrete power switches, such as super junction MOSFET
Produktvideo & Katalog
