BM3G115MUV-LB (Neues Produkt)
Nano Cap™, EcoGaN™, 650V 150mΩ 2MHz, GaN HEMT Power Stage IC
BM3G115MUV-LB (Neues Produkt)
Nano Cap™, EcoGaN™, 650V 150mΩ 2MHz, GaN HEMT Power Stage IC
This product is a rank product for the industrial equipment market. This is the best product for use in these applications. BM3G115MUV-LB provides an optimum solution for all electronics systems that requires high power density and efficiency. By integrating the 650 V enhancement GaN HEMT and silicon driver to ROHM’s original package, parasitic inductance caused by a PCB and wire bonding is reduced significantly compared to traditional discrete solutions. Owing to this, a high switching slew rate up to 150 V/ns can be achieved. On the other hand, adjustable gate drive strength contributes to low EMI, and various protections and other additional functions provide optimized cost, PCB size. This IC is designed to adapt major exist controllers, so that it also can be used to replace the traditional discrete power switches, such as super junction MOSFET.
Produktdetails
Spezifikationen:
Vin (Min.)[V]
-0.6
Vin (Max.)[V]
30
Operating Current@500 kHz(Typ) [mA]
1.2
Quiescent Current (Typ) [μA]
150
Switching Frequency(Max)[MHz]
2
Turn-on Delay Time(Typ)[ns]
14
Turn-off Delay Time(Typ)[ns]
19
Temperature (Min.)[°C]
-40
Temperature (Max.)[°C]
105
ON State Resistance(Typ)[mΩ]
150
Package Size [mm]
8.0x8.0 (t=1.0)
Application
Networking, Server
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Min.)[°C]
150
Eigenschaften:
- Nano Cap™ Integrated 5 V LDO
- Wide Operating Range for VDD Pin Voltage
- Wide Operating Range for IN Pin Voltage
- Low VDD Quiescent and Operating Current
- Low Propagation Delay
- High dv/dt Immunity
- Adjustable Gate Drive Strength
- Power Good Signal Output
- VDD UVLO Protection
- Thermal Shutdown Protection
Produktvideo & Katalog
