RGT80TS65D
5 µs Kurzschluss-Toleranz, 650V 40A, eingebaute FRD, TO-247GE, Feldstopp-Trench-IGBT

ROHM's IGBT Produkte unterstützen stromsparende Hochleistung und verschiedene Hochspannungs- und Hochstrombereiche.

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Produktdetails

 
Teilenummer | RGT80TS65DGC13
Status | Empfohlen
Gehäuse | TO-247GE
Einheitenmenge | 600
Minimale Gehäusemenge | 30
Gehäusetyp | Tube
RoHS | Ja

Spezifikationen:

Series

T: For inverter (tsc 5µs)

VCES [V]

650

IC(100°C)[A]

40

VCE(sat) (Typ.) [V]

1.65

tf(Typ.) [ns]

55

tsc(Min.) [us]

5

Built-in Diode

FRD

Pd [W]

234

BVCES (Min.)[V]

650

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Package Size [mm]

15.94x20.95 (t=5.02)

Eigenschaften:

1) Low Collector - Emitter Saturation Voltage
2) Low Switching Loss
3) Short Circuit Withstand Time 5us
4) Built in Very Fast & Soft Recovery FRD (RFN - Series)
5) Pb - free Lead Plating ; RoHS Compliant
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