RGTH50TK65
Hochgeschwindigkeitsschalter, 650V 25A, TO-3PFM, Feldstopp-Trench-IGBT

ROHM's IGBT Produkte unterstützen stromsparende Hochleistung und verschiedene Hochspannungs- und Hochstrombereiche.

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Produktdetails

 
Teilenummer | RGTH50TK65GC11
Status | Empfohlen
Gehäuse | TO-3PFM
Einheitenmenge | 450
Minimale Gehäusemenge | 450
Gehäusetyp | Tube
RoHS | Ja

Spezifikationen:

Series

TH: High speed SW

VCES [V]

650

IC(100°C)[A]

16

VCE(sat) (Typ.) [V]

1.6

tf(Typ.) [ns]

50

Pd [W]

59

BVCES (Min.)[V]

650

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Eigenschaften:

  • Low Collector-Emitter Saturation Voltage
  • High Speed Switching
  • Low Switching Loss & Soft Switching
  • Pb-free Lead Plating; RoHS Compliant
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Technische Artikel

Schematic Design & Verification

  • Calculation of Power Dissipation in Switching Circuit
  • Method for Monitoring Switching Waveform
  • Importance of Probe Calibration When Measuring Power: Deskew
  • Impedance Characteristics of Bypass Capacitor

Thermal Design

  • Notes for Temperature Measurement Using Thermocouples
  • Two-Resistor Model for Thermal Simulation
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction
  • What is a Thermal Model? (IGBT)
  • Measurement Method and Usage of Thermal Resistance RthJC
  • Precautions When Measuring the Rear of the Package with a Thermocouple

Design Tools

Models

  • SPICE Simulation Evaluation Circuit
  • RGTH50TK65 SPICE Model
  • RGTH50TK65 Thermal Model (lib)

Packaging & Qualität

Package Information

  • Package Dimensions
  • Inner Structure
  • Taping Information
  • Explanation for Marking
  • Moisture Sensitivity Level
  • Anti-Whisker formation
  • Condition of Soldering

Manufacturing Data

  • Reliability Test Result

Environmental Data

  • Constitution Materials List
  • About Flammability of Materials
  • Compliance of the ELV directive
  • Report of SVHC under REACH Regulation

Export Information

  • About Export Administration Regulations (EAR)