RD3G08BBJHRB (Neues Produkt)
Pch -40V -80A, TO-252 (DPAK), Power MOSFET for Automotive
RD3G08BBJHRB
RD3G08BBJHRB (Neues Produkt)
Pch -40V -80A, TO-252 (DPAK), Power MOSFET for Automotive
RD3G08BBJHRB is an automotive grade MOSFET that is AEC-Q101 qualified. Ideal for ADAS and Info. and Lighting and Body.
Produktdetails
Teilenummer | RD3G08BBJHRBTL
Status |
Empfohlen
Gehäuse |
TO-252
Einheitenmenge | 2500
Minimale Gehäusemenge | 2500
Gehäusetyp | Taping
RoHS |
Ja
Spezifikationen:
Package Code
TO-252 (DPAK)
JEITA Package
SC-63
Number of terminal
3
Polarity
Pch
Drain-Source Voltage VDSS[V]
-40
Drain Current ID[A]
-80
RDS(on)[Ω] VGS=4.5V(Typ.)
0.0049
RDS(on)[Ω] VGS=10V(Typ.)
0.004
RDS(on)[Ω] VGS=Drive (Typ.)
0.0049
Total gate charge Qg[nC]
72
Power Dissipation (PD)[W]
142
Drive Voltage[V]
-4.5
Trr (Typ.)[ns]
42
Mounting Style
Surface mount
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
6.6x10.0 (t=2.3)
Common Standard
AEC-Q101 (Automotive Grade)
Eigenschaften:
- Low on-resistance
- Pd-free plating;RoHS compliant
- 100% Avalanche tested
- AEC-Q101 qualified
