ROHM Product Detail

QH8J2 (Neues Produkt)
-12V -4A, Dual P-channel, TSMT8, Power MOSFET

QH8J2 is a low on-resistance MOSFET ideal for Switching and Motor drives applications.

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Produktdetails

 
Teilenummer | QH8J2TR
Status | Empfohlen
Gehäuse | TSMT8
Gehäusetyp | Taping
Einheitenmenge | 3000
Minimale Gehäusemenge | 3000
RoHS | Ja

Spezifikationen:

Package Code

TSMT8

Applications

Switching, Motor

Number of terminal

8

Polarity

P+P

Drain-Source Voltage VDSS[V]

-12

Drain Current ID[A]

-4

RDS(on)[Ω] VGS=1.5V(Typ)

0.066

RDS(on)[Ω] VGS=1.8V(Typ)

0.046

RDS(on)[Ω] VGS=2.5V(Typ)

0.036

RDS(on)[Ω] VGS=4.5V(Typ)

0.026

RDS(on)[Ω] VGS=Drive (Typ)

0.066

Total gate charge Qg[nC]

20

Power Dissipation (PD)[W]

1.5

Drive Voltage[V]

-1.5

Mounting Style

Surface mount

Storage Temperature (Min)[℃]

-55

Storage Temperature (Max)[℃]

150

Package Size [mm]

2.8x3.0 (t=0.85)

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Eigenschaften:

  • Low on - resistance
  • Small Surface Mount Package (TSMT8)
  • Pb-free lead plating ; RoHS compliant
  • Halogen Free
  • Built-in G-S Protection Diode
  • Low voltage drive(1.5V)
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