ROHM Product Detail

RD3P01BAT
Pch -100V -10A Power MOSFET

RD3P01BAT is a low on-resistance power MOSFET suitable for switching applications.

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Produktdetails

 
Teilenummer | RD3P01BATTL1
Status | Empfohlen
Gehäuse | TO-252
Gehäusetyp | Taping
Einheitenmenge | 2500
Minimale Gehäusemenge | 2500
RoHS | Ja

Spezifikationen:

Package Code

TO-252 (DPAK)

JEITA Package

SC-63

Applications

Switching

Number of terminal

3

Polarity

Pch

Drain-Source Voltage VDSS[V]

-100

Drain Current ID[A]

-10

RDS(on)[Ω] VGS=6V(Typ)

0.21

RDS(on)[Ω] VGS=10V(Typ)

0.181

RDS(on)[Ω] VGS=Drive (Typ)

0.21

Total gate charge Qg[nC]

12.3

Power Dissipation (PD)[W]

25

Drive Voltage[V]

-6

Trr (Typ)[ns]

42

Mounting Style

Surface mount

Storage Temperature (Min)[℃]

-55

Storage Temperature (Max)[℃]

150

Package Size [mm]

6.6x10.0 (t=2.4)

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Eigenschaften:

  • Low on - resistance
  • High power small mold package
  • Pb-free plating ; RoHS compliant
  • 100% Rg and UIS tested
  • Halogen free
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