BD2311NVX-C (In Entwicklung)
Single-Channel Ultra-Fast Gate Driver For Automotive

BD2311NVX-C is a single gate driver capable of driving GaN HEMTs at Ultra-Fast with narrow pulses, which can contribute to the long-range and high accuracy of LiDAR.It can supply 5.4A output current in a small 6-pin SON package. As a protection function, the driver includes an Undervoltage Lockout (UVLO) between VCC and GND.

Produktdetails

 
Teilenummer | BD2311NVX-CE2
Status | In Entwicklung
Gehäuse | SSON06RX2020
Einheitenmenge | 4000
Minimale Gehäusemenge | 4000
Gehäusetyp | Taping
RoHS | Ja

Spezifikationen:

Channel

1

Vcc1(Min.)[V]

4.5

Vcc1(Max.)[V]

5.5

I/O Delay Time(Max.)[ns]

Rise=3.4ns(typ)/Fall=3.0ns(typ)

Min. Input Pulse Width[ns]

1.25

Operating Temperature (Min.)[°C]

-40

Operating Temperature (Max.)[°C]

125

Package Size [mm]

2x2(t=0.6)

Common Standard

AEC-Q100 (Automotive Grade)

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Eigenschaften:

  • AEC-Q100 Qualified (Grade 1)
  • Gate Driver Voltage Range 4.5V to 5.5V
  • Minimum Input Pulse Width 1.25ns (220pF load)
  • Typical Rise Time 0.65ns (220pF load)
  • Typical Fall Time 0.70ns (220pF load)
  • Built-in Undervoltage Lockout (UVLO) between VCC and GND
  • Inverting and Non-inverting Inputs
  • Small Package SSON06RX2020

Reference Design / Application Evaluation Kit

 
    • Reference Design - REFLD002
    • Laser Driver Reference Design with GaN HEMT for High-Resolution LiDAR
    • The range of uses for LiDAR sensors is expanding to include not only autonomous driving, but also applications in the industrial and infrastructure fields. LiDAR sensors are required to have longer sensing distance and higher resolution, and in addition to improving the characteristics of the laser diode, it is necessary to drive the laser diode at higher speeds and power. ROHM offers a lineup of 905nm high power narrow emission width laser diodes. (RLD90QZWx Series) Reference designs are available that includes EcoGAN™, a next-generation device capable of high-speed drive, along with a high-speed gate driver for GaN HEMTs that contribute to improved LiDAR sensor characteristics (distance and resolution) .


      • Enables high-speed driving of laser diodes - a key device in LiDAR applications
      • Includes next-gen EcoGaN™ devices
      • Built-in high-speed gate driver for GaN HEMTs (BD2311NVX-C)
      • Two circuit types: square wave and resonant

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