BM61M22BFJ-C
Ein-Kanal-Gate-Treiber mit galvanischer Trennung, Isolationsspannung 2500 Vrms
BM61M22BFJ-C
BM61M22BFJ-C
Ein-Kanal-Gate-Treiber mit galvanischer Trennung, Isolationsspannung 2500 Vrms
Der BM61M22BFJ-C ist ein Gate-Treiber mit galvanischer Trennung, einer Isolationsspannung von 2500 Veff, einer maximalen I/O-Verzögerungszeit von 60 ns und minimaler Eingangspulsbreite von 60 ns. Das Bauteil verfügt über eine Abschaltfunktion bei Unterspannung (UVLO).
Produktdetails
Spezifikationen:
Grade
Automotive
Common Standard
AEC-Q100 (Automotive Grade)
Isolation Voltage[Vrms]
2500.0
Channel
1
Vcc1(Min.)[V]
4.5
Vcc1(Max.)[V]
5.5
Vcc2(Min.)[V]
9.0
Vcc2(Max.)[V]
24.0
Iout(Max.)[A]
2.0
I/O Delay Time(Max.)[ns]
60
Min. Input Pulse Width[ns]
60
Operating Temperature (Min.)[°C]
-40
Operating Temperature (Max.)[°C]
125
Switching Controller
No
Temperature Monitor
No
Package Size [mm]
6x4.9 (t=1.6)
Eigenschaften:
- AEC-Q100 Qualified (Grade1)
- Providing Galvanic Isolation
- Under-voltage Lockout Function
- UL1577 (pending)
Evaluation
Board
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- Evaluation Board
- BM61M22BFJ-EVK001
The BM61M22BFJ-EVK001 board can be driving MOSFET and IGBT Power Devices. The Input-side power supply voltage is from 4.5 to 5.5 V. The output-side power supply is from 9 to 24 V. The BM61M22BFJ-C has Power Supply protections which are the Under Voltage Lockout (UVLO) function at Input-side and Output-side. The BM61M22BFJ-EVK001 allows designers to evaluate Rohm’s Gate Driver family for various applications.
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- Evaluation Board
- BM61M22BFJ-EVK002
The BM61M22BFJ-EVK002 board can be driving two MOSFET and IGBT Power Devices such as for High-side and Low-side on Half Bridge application. The Input-side power supply voltage is from 4.5 to 5.5 V. The output-side power supply is from 9 to 24 V. The BM61M22BFJ-C has Power Supply protections which are the Under-Voltage Lockout (UVLO) function at Input-side and Output-side. The BM61M22BFJ-EVK002 allows designers to evaluate Rohm’s Gate Driver family for various applications.
