BD450M2WFP3-C
200 mA 3,3 V oder 5,0 V Ausgangsleistung LDO-Regler
Für neue Designs nicht empfohlen
BD450M2WFP3-C
200 mA 3,3 V oder 5,0 V Ausgangsleistung LDO-Regler
Produkte, die nicht für neue Designs verwendet werden können (Nicht empfohlen für Designabweichungen).
Produktdetails
Funktionalen Sicherheit:
Spezifikationen:
ch
1
Withstand Voltage (Max.)[V]
45
Vin(Min.)[V]
5.5
Vin(Max.)[V]
42
Iout(Max.)[A]
0.2
Vout Type
Fixed
Vout Accuracy
±2.0%
Circuit Current[mA]
0.04
Dropout Voltage (Typ.)[V]
0.16(Io=100mA)
Ripple Rejection [dB]
65
Load Regulation[mV]
10(Io=10mA to 100mA )
Output Capacitor[µF]
6
Shutdown Function
Yes
Thermal Shut-down
Yes
Over Current Protection
Yes
Over Voltage Protection
No
Under Voltage Lock Out
No
Discharge Function
No
Soft Start
No
Package
SOT223-4F
Reference Code
SOT223-4
Operating Temperature (Min.)[°C]
Tj=-40
Operating Temperature (Max.)[°C]
Tj=150
Common Standard
AEC-Q100 (Automotive Grade)
Eigenschaften:
・Geeignet für Automobilanwendungen・Großer Temperaturbereich: -40℃ bis +150℃
・Großer Betriebsspannungsbereich: 3,0 V bis 42 V
・Niedriger Ruhestrom: 40 μA (Typ.)
・Ausgangsspannung: 200mA
・Hohe Genauigkeit der Ausgangsspannung: ±2%
・Überspannungsschutz (OCP)
・Thermische Abschaltung (TSD)
・AEC-Q100 zugelassen
Referenzdesign / Anwendungsevaluierungskit
-
- Reference Design - REF68007
- TO247 SiC MOSFET 3-Phase Inverter Evaluation Board
The SCT4013DRC15-EVK-A08 provides detailed specifications for a three-phase inverter featuring Silicon Carbide (SiC) MOSFETs. The SCT4013DRC15-EVK-A08 serves as a reference design platform for evaluating a three-phase inverter system based on ROHM’s 4th generation SiC MOSFETs in a TO‑247 package. This evaluation kit includes a power board, gate driver board, and sensing board, offering a complete solution for high-efficiency power conversion applications up to 10 kVA. The reference design is supported by comprehensive development resources, including schematics, bill of materials (BOM), and PCB layout files. It features a reference board optimized with TO‑247 SiC MOSFETs, designed for high-performance three-phase inverter applications. We encourage users to explore the advanced control capabilities of this EVK and consider its integration into future power electronics development projects.
