SCT3080KL
N-Kanal Siliziumkarbid-Leistungs-MOSFET

SCT3080KL ist ein SiC (Siliziumkarbid) Trench MOSFET. Seine Merkmale umfassen Hochspannungsfestigkeit, niedrigen Durchlasswiderstand und schnelle Schaltgeschwindigkeit.

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Produktdetails

 
Teilenummer | SCT3080KLGC11
Status | Empfohlen
Gehäuse | TO-247N
Einheitenmenge | 450
Minimale Gehäusemenge | 30
Gehäusetyp | Tube
RoHS | Ja

Spezifikationen:

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mΩ]

80.0

Drain Current[A]

31.0

Total Power Dissipation[W]

165

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Eigenschaften:

・ Low on-resistance
・ Fast switching speed
・ Fast reverse recovery
・ Easy to parallel
・ Simple to drive
・ Pb-free lead plating ; RoHS compliant

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White Paper

  • Cutting-Edge Web Simulation Tool “ROHM Solution Simulator” Capable of Complete Circuit Verification of Power Devices and Driver ICs
  • LEADRIVE: Design, Test and System Evaluation of Silicon Carbide Power Modules and Motor Control Units
  • Solving the challenges of driving SiC MOSFETs with new packaging developments

Technische Artikel

Schematic Design & Verification

  • [NEW]Application Note for SiC Power Devices and Modules
  • Calculating Power Loss from Measured Waveforms
  • Calculation of Power Dissipation in Switching Circuit
  • Method for Monitoring Switching Waveform
  • Precautions during gate-source voltage measurement for SiC MOSFET
  • Snubber circuit design methods for SiC MOSFET
  • Gate-source voltage behaviour in a bridge configuration
  • Gate-Source Voltage Surge Suppression Methods
  • Importance of Probe Calibration When Measuring Power: Deskew
  • Impedance Characteristics of Bypass Capacitor

Thermal Design

  • Notes for Temperature Measurement Using Thermocouples
  • Two-Resistor Model for Thermal Simulation
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction
  • What is a Thermal Model? (SiC Power Device)
  • How to Use Thermal Models
  • Measurement Method and Usage of Thermal Resistance RthJC
  • Precautions When Measuring the Rear of the Package with a Thermocouple

Design Tools

Simulations (Login Required)

  • AC-DC PFC A001: BCM VIN=200V IIN=2.5A
  • AC-DC PFC A002: BCM Diode-Bridge-Less VIN=200V IIN=2.5A
  • AC-DC PFC A004: CCM VIN=200V IIN=2.5A
  • AC-DC PFC A005: CCM 2-Phase VIN=200V IIN=5A
  • AC-DC PFC A006: CCM Synchro VIN=200V IIN=2.5A
  • AC-DC PFC A011: DCM VIN=200V IIN=2.5A
  • AC-DC PFC A012: DCM 2-Phase VIN=200V IIN=5A
  • AC-DC PFC A014: DCM Synchro VIN=200V IIN=2.5A
  • DC-DC Converter C006: Buck Converter Vo=250V Io=20A
  • DC-DC Converter C006: Buck Converter Vo=250V Io=20A
  • DC-DC Converter C007: Buck Converter 2-Phase Vo=250V Io=40A
  • DC-DC Converter C007: Buck Converter 2-Phase Vo=250V Io=40A
  • DC-DC Converter C010: Flyback Converter VIN=800V Vo=25V Io=10A
  • DC-DC Converter C011: Forward Converter VIN=500V Vo=25V Io=10A
  • DC-DC Converter C012: LLC Buck Converter Vo=12V Io=250A
  • DC-DC Converter C013: Phase-Shift Buck Converter Vo=12V Io=250A
  • DC-DC Converter C014: Quasi-Resonant Converter VIN=800V Vo=25 Io=10A
  • Method for Exporting Circuit Data (ROHM Solution Simulator)

Models

  • SCT3080KL SPICE Simulation Evaluation Circuit
  • SCT3080KL SPICE Model
  • SCT3080KL Thermal Model (lib)
  • SCT3080KL PLECS Model

Characteristics Data

  • ESD Data

Packaging & Qualität

Package Information

  • Package Dimensions
  • Taping Information
  • Inner Structure
  • Explanation for Marking
  • Moisture Sensitivity Level
  • Anti-Whisker formation
  • Condition of Soldering

Manufacturing Data

  • Reliability Test Result

Environmental Data

  • Constitution Materials List
  • About Flammability of Materials
  • Compliance of the ELV directive
  • Report of SVHC under REACH Regulation

Export Information

  • About Export Administration Regulations (EAR)