SCT4018KE (Neues Produkt)
1200V, 81A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET

SCT4018KE is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time.

Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.

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Produktdetails

 
Teilenummer | SCT4018KEC11
Status | Empfohlen
Gehäuse | TO-247N
Einheitenmenge | 450
Minimale Gehäusemenge | 30
Gehäusetyp | Tube
RoHS | Ja

Spezifikationen:

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mΩ]

18

Generation

4th Gen (Trench)

Drain Current[A]

81

Total Power Dissipation[W]

312

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

175

Package Size [mm]

16x21 (t=5.2)

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Eigenschaften:

  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant