SCT4026DW7 (Neues Produkt)

750V, 51A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
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SCT4026DW7
(Neues Produkt)

SCT4026DW7 (Neues Produkt)
750V, 51A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET

SCT4026DW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.

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Produktdetails

 
Teilenummer | SCT4026DW7TL
Status | Empfohlen
Gehäuse | TO-263-7L
Einheitenmenge | 1000
Minimale Gehäusemenge | 1000
Gehäusetyp | Taping
RoHS | Ja

Spezifikationen:

Drain-source Voltage[V]

750

Drain-source On-state Resistance(Typ.)[mΩ]

26

Generation

4th Gen (Trench)

Drain Current[A]

51

Total Power Dissipation[W]

150

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

175

Package Size [mm]

10.2x15.4 (t=4.7)

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Eigenschaften:

  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant
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