SCT4036KEHR (Neues Produkt)
1200V, 43A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

AEC-Q101 qualified automotive grade product. SCT4036KEHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.

Produktdetails

 
Teilenummer | SCT4036KEHRC11
Status | Empfohlen
Gehäuse | TO-247N
Einheitenmenge | 450
Minimale Gehäusemenge | 30
Gehäusetyp | Tube
RoHS | Ja

Spezifikationen:

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mΩ]

36

Generation

4th Gen (Trench)

Drain Current[A]

43

Total Power Dissipation[W]

176

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

175

Package Size [mm]

16x21 (t=5.2)

Common Standard

AEC-Q101 (Automotive Grade)

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Eigenschaften:

  • Qualified to AEC-Q101
  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant