SCT4062KWA
1200V, 24A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT4062KWA
1200V, 24A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT4062KWA is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
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Produktdetails
Spezifikationen:
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
62
Generation
4th Gen (Trench)
Drain Current[A]
24
Total Power Dissipation[W]
93
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
175
Package Size [mm]
15.4x10.2 (t=4.7)
Eigenschaften:
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
- Wide creepage distance = min.4.7mm
