BSM250D17P2E004
1700V, 250A, Halbbrücke, Siliziumkarbid- (SiC-) Leistungsmodul
BSM250D17P2E004
1700V, 250A, Halbbrücke, Siliziumkarbid- (SiC-) Leistungsmodul
Der BSM250D17P2E004 ist ein Halbbrückenmodul, bestehend aus SiC-DMOSFET und SiC-SBD, geeignet für Motoransteuerung, Wechselrichter, Umrichter, Photovoltaik, Windkraftanlagen, Induktionsheizungen.
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Produktdetails
Spezifikationen:
Drain-source Voltage[V]
1700
Drain Current[A]
250
Total Power Dissipation[W]
1800
Junction Temperature (Max.) [℃]
175
Storage Temperature (Min.) [℃]
-40
Storage Temperature (Max.) [℃]
125
Package
Half-bridge
Package Size [mm]
152.0x62.0 (t=18.0)
Eigenschaften:
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.
Referenzdesign / Anwendungsevaluierungskit
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Produktvideo & Katalog
