BSM250D17P2E004
1700V, 250A, Halbbrücke, Siliziumkarbid- (SiC-) Leistungsmodul
BSM250D17P2E004
1700V, 250A, Halbbrücke, Siliziumkarbid- (SiC-) Leistungsmodul
Der BSM250D17P2E004 ist ein Halbbrückenmodul, bestehend aus SiC-DMOSFET und SiC-SBD, geeignet für Motoransteuerung, Wechselrichter, Umrichter, Photovoltaik, Windkraftanlagen, Induktionsheizungen.
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Produktdetails
Spezifikationen:
Drain-source Voltage[V]
1700
Drain Current[A]
250
Total Power Dissipation[W]
1800
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
125
Package
Half bridge
Package Size [mm]
152x57.95 (t=18)
Eigenschaften:
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.
Reference Design / Application Evaluation Kit
-
- Drive Board - BSMGD2G17D24-EVK001
This evaluation board, BSMGD2G17D24-EVK001, is a gate driver board for full SiC Modules with the 2nd Generation 1700V SiC-MOSFET in E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.
-
- Snubber Module - MGSM1D72J3-934MH93
Snubber Module for BSM250 (1700V,E type)
-
- Drive Board - TAMURA 2DUB series
Drive Board for BSM series (1700V, E type)
