BSM600D12P3G001
1200V, 576A, Halbbrücke, Full-SiC-Leistungsmodul mit Trench-MOSFET
BSM600D12P3G001
1200V, 576A, Halbbrücke, Full-SiC-Leistungsmodul mit Trench-MOSFET
Der BSM600D12P3G001 ist ein Halbbrückenmodul, bestehend aus SiC-UMOSFET und SiC-SBD, geeignet für Motoransteuerung, Wechselrichter, Umrichter, Photovoltaik, Windkraftanlagen, Induktionsheizungen.
Für den Automobilbereich kontaktieren Sie bitte unser Sales-Team.
Produktdetails
Spezifikationen:
Drain-source Voltage[V]
1200
Drain Current[A]
576.0
Total Power Dissipation[W]
2450
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
125
Package
Half bridge
Package Size [mm]
152x62 (t=18)
Eigenschaften:
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.
Evaluation
Board
-
- Drive Board
- AgileSwitch 2ASC-12A1HP / EDCA1
For BSM series (1200V, E / G type)
Core Driver : 2ASC-12A1HP
Adapter Board : EDCA1
-
- Drive Board
- BSMGD3G12D24-EVK001
This evaluation board, BSMGD3G12D24-EVK001, is a gate driver board for full SiC Modules with the 3nd Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.
-
- Snubber Module
- MGSM1D72J2-145MH16
BSM series (1200V, E / G type)
-
- Drive Board
- TAMURA 2DU series
For BSM series (1200V, C / E / G type)
