BSM600D12P3G001
1200V, 576A, Halbbrücke, Full-SiC-Leistungsmodul mit Trench-MOSFET

Der BSM600D12P3G001 ist ein Halbbrückenmodul, bestehend aus SiC-UMOSFET und SiC-SBD, geeignet für Motoransteuerung, Wechselrichter, Umrichter, Photovoltaik, Windkraftanlagen, Induktionsheizungen.

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Produktdetails

 
Teilenummer | BSM600D12P3G001
Status | Empfohlen
Gehäuse | G
Einheitenmenge | 4
Minimale Gehäusemenge | 4
Gehäusetyp | Corrugated Cardboard
RoHS | Ja

Spezifikationen:

Drain-source Voltage[V]

1200

Drain Current[A]

576.0

Total Power Dissipation[W]

2450

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

125

Package

Half bridge

Eigenschaften:

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.

Evaluation
Board

 
    • Drive Board
    • AgileSwitch 2ASC-12A1HP / EDCA1

    • For BSM series (1200V, E / G type)
      Core Driver : 2ASC-12A1HP
      Adapter Board : EDCA1

  • Detail
    • Drive Board
    • BSMGD3G12D24-EVK001

    • This evaluation board, BSMGD3G12D24-EVK001, is a gate driver board for full SiC Modules with the 3nd Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.

  • User's Guide Purchase Inquiry
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    • EVSM1D72J2-145MH16

    • BSM series (1200V, E / G type)

  • Purchase Inquiry
    • Drive Board
    • TAMURA 2DU series

    • For BSM series (1200V, C / E / G type)

  • Detail
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Unterlagen

White Paper

  • Cutting-Edge Web Simulation Tool “ROHM Solution Simulator” Capable of Complete Circuit Verification of Power Devices and Driver ICs

User's Guide

  • Evaluation Board User's Guide

Technische Artikel

Schematic Design & Verification

  • Calculation of Power Dissipation in Switching Circuit
  • Method for Monitoring Switching Waveform
  • Application Note for SiC Power Devices and Modules
  • Importance of Probe Calibration When Measuring Power: Deskew
  • Impedance Characteristics of Bypass Capacitor

Thermal Design

  • Notes for Temperature Measurement Using Thermocouples
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction
  • What is a Thermal Model? (SiC Power Device)
  • How to Use Thermal Models
  • Optimized heat sink assembly method for effective heat dissipation
  • Measurement Method and Usage of Thermal Resistance RthJC
  • Precautions When Measuring the Rear of the Package with a Thermocouple

Design Tools

Models

  • BSM600D12P3G001 PLECS Model
  • BSM600D12P3G001 SPICE Simulation Evaluation Circuit
  • BSM600D12P3G001 SPICE Model
  • BSM600D12P3G001 Thermal Model (lib)
  • Power Module Loss Simulator - 3Phase Inverter
  • Power Module Loss Simulator - Boost Converter
  • Power Module Loss Simulator - Buck Converter

Packaging & Qualität

Environmental Data

  • Compliance of the ELV directive
  • Report of SVHC under REACH Regulation

Export Information

  • About Export Regulations