SCS210KE2HR
SCS210KE2HR
Silikonkarbid-Schottky-Diode für Automobilbau
Reduzierte Schaltverluste, Schnellschaltung ermöglicht. (3-Pin-Gehäuse)
Produktdetails
Spezifikationen:
Grade
Automotive
Common Standard
AEC-Q101 (Automotive Grade)
Reverse Voltage[V]
1200
Continuous Forward Current[A]
10.0
Total Power Dissipation[W]
170
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x21 (t=5.2)
Eigenschaften:
- AEC-Q101 qualifiziert
- Kurze Wiederherstellungszeit
- Hohe Schaltfähigkeit
- Verringerte Temperaturabhängigkeit
Ressourcen entwerfen
Unterlagen
Technische Artikel
Schematic Design & Verification
Thermal Design
- What Is Thermal Design
- Basics of Thermal Resistance and Heat Dissipation
- Method for Calculating Junction Temperature from Transient Thermal Resistance Data
- Notes for Temperature Measurement Using Thermocouples
- Two-Resistor Model for Thermal Simulation
- Notes for Temperature Measurement Using Forward Voltage of PN Junction
- What is a Thermal Model? (SiC Power Device)
- How to Use Thermal Models
- Measurement Method and Usage of Thermal Resistance RthJC
- Precautions When Measuring the Rear of the Package with a Thermocouple
Design Tools
Models
- SCS210KE2HR SPICE Simulation Evaluation Circuit
- SCS210KE2HR SPICE Model
- SCS210KE2HR Thermal Model (lib)
- How to Create Symbols for PSpice Models