Für neue Designs nicht empfohlen
SCS230AN
650V, 30A, SMD, Silicon-carbide (SiC) SBD
SCS230AN
Für neue Designs nicht empfohlen
SCS230AN
650V, 30A, SMD, Silicon-carbide (SiC) SBD
Produkte, die nicht für neue Designs verwendet werden können (Nicht empfohlen für Designabweichungen).
Produktdetails
Teilenummer | SCS230ANTRL
Status |
Für neue Designs nicht empfohlen
Gehäuse |
TO-263-2L
Gehäusetyp | Taping
Einheitenmenge | 1000
Minimale Gehäusemenge | 1000
RoHS |
Ja
MSL | 1
Spezifikationen:
Grade
Standard
Reverse Voltage[V]
650
Continuous Forward Current[A]
30
Generation
2nd Gen
Total Power Dissipation[W]
208
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
175
Package Size [mm]
15.1x10.1 (t=4.7)
Eigenschaften:
- Low forward voltage
- Negligible recovery time/current
- Temperature independent switching behavior
- Wide creepage distance = min. 5.10mm
Produktvideo & Katalog
Produktvideo-Übersicht
Wide Creepage Distance Package SiC Schottky Barrier Diodes - SCS2xxAN (650V), SCS2xxKN (1,200V)
2024-11-12 00:00:00.0
( 1.09 MB )
The SCS2xxAN (650V) and SCS2xxKN (1,200V) series of SiC Schottky barrier diodes achieve wide creepage distance in a compact surface mount package. This reduces the need for special insulation measures such as potting.
The SCS2xxAN (650V) and SCS2xxKN (1,200V) series of SiC Schottky barrier diodes achieve wide creepage distance in a compact surface mount package. This reduces the need for special insulation measures such as potting.