SCS306AM
SCS306AM
Silikonkarbid-Schottky-Diode
Reduzierte Schaltverluste, Schnellschaltung ermöglicht.
Data Sheet
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* Dieses Produkt entspricht der Standardqualifizierung.
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Produktdetails
Spezifikationen:
Grade
Standard
Reverse Voltage[V]
650
Continuous Forward Current[A]
6.0
Total Power Dissipation[W]
30
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
10.16x15.87 (t=4.9)
Eigenschaften:
- Shorter recovery time
- Reduced temperature dependence
- High-speed switching possible
- High surge current capability
Ressourcen entwerfen
Unterlagen
Technische Artikel
Schematic Design & Verification
Thermal Design
- What Is Thermal Design
- Basics of Thermal Resistance and Heat Dissipation
- Method for Calculating Junction Temperature from Transient Thermal Resistance Data
- Notes for Temperature Measurement Using Thermocouples
- Two-Resistor Model for Thermal Simulation
- Notes for Temperature Measurement Using Forward Voltage of PN Junction
- What is a Thermal Model? (SiC Power Device)
- How to Use Thermal Models
- Measurement Method and Usage of Thermal Resistance RthJC
- Precautions When Measuring the Rear of the Package with a Thermocouple
Design Tools
Models
- SCS306AM SPICE Simulation Evaluation Circuit
- SCS306AM SPICE Model
- SCS306AM Thermal Model (lib)
- How to Create Symbols for PSpice Models