SCS308AJ
Silikonkarbid-Schottky-Diode
SCS308AJ
SCS308AJ
Silikonkarbid-Schottky-Diode
Reduzierte Schaltverluste, Schnellschaltung ermöglicht.
Data Sheet
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* Dieses Produkt entspricht der Standardqualifizierung.
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Produktdetails
Teilenummer | SCS308AJTLL
Status |
Empfohlen
Gehäuse |
LPTL
Gehäusetyp | Taping
Einheitenmenge | 1000
Minimale Gehäusemenge | 1000
RoHS |
Ja
Spezifikationen:
Grade
Standard
Reverse Voltage[V]
650
Continuous Forward Current[A]
8
Generation
3rd Gen
Total Power Dissipation[W]
62
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
15.1x10.1 (t=4.7)
Eigenschaften:
- Low forward voltage
- Negligible recovery time/current
- Temperature independent switching behavior
- High surge current capability
- Low leakage current
Produktvideo & Katalog
Produktvideo-Übersicht
Wide Creepage Distance Package SiC Schottky Barrier Diodes - SCS2xxAN (650V), SCS2xxKN (1,200V)
2024-11-12 00:00:00.0
( 1.09 MB )
The SCS2xxAN (650V) and SCS2xxKN (1,200V) series of SiC Schottky barrier diodes achieve wide creepage distance in a compact surface mount package. This reduces the need for special insulation measures such as potting.
The SCS2xxAN (650V) and SCS2xxKN (1,200V) series of SiC Schottky barrier diodes achieve wide creepage distance in a compact surface mount package. This reduces the need for special insulation measures such as potting.