SCS312AM
Silikonkarbid-Schottky-Diode

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Produktdetails

 
Teilenummer | SCS312AMC
Status | Empfohlen
Gehäuse | TO-220FM2L
Einheitenmenge | 1000
Minimale Gehäusemenge | 50
Gehäusetyp | Tube
RoHS | Ja

Spezifikationen:

Grade

Standard

Reverse Voltage[V]

650

Continuous Forward Current[A]

12.0

Total Power Dissipation[W]

36

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Eigenschaften:

  • Shorter recovery time
  • Reduced temperature dependence
  • High-speed switching possible
  • High surge current capability
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Unterlagen

White Paper

  • Cutting-Edge Web Simulation Tool “ROHM Solution Simulator” Capable of Complete Circuit Verification of Power Devices and Driver ICs

Technische Artikel

Schematic Design & Verification

  • Calculation of Power Dissipation in Switching Circuit
  • Method for Monitoring Switching Waveform
  • Application Note for SiC Power Devices and Modules
  • Importance of Probe Calibration When Measuring Power: Deskew
  • Impedance Characteristics of Bypass Capacitor

Thermal Design

  • Two-Resistor Model for Thermal Simulation
  • Notes for Temperature Measurement Using Thermocouples
  • What is a Thermal Model? (SiC Power Device)
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction
  • How to Use Thermal Models
  • Measurement Method and Usage of Thermal Resistance RthJC
  • Precautions When Measuring the Rear of the Package with a Thermocouple

Design Tools

Models

  • SCS312AM SPICE Simulation Evaluation Circuit
  • SCS312AM SPICE Model
  • SCS312AM Thermal Model (lib)

Packaging & Qualität

Package Information

  • Package Dimensions
  • Moisture Sensitivity Level
  • Anti-Whisker formation

Environmental Data

  • About Flammability of Materials
  • Compliance of the ELV directive
  • Report of SVHC under REACH Regulation

Export Information

  • About Export Administration Regulations (EAR)