RFNL5BGE6S
Superschnelle Diode mit kurzer Erholungszeit

RFNL5BGE6S ist die epitaktische Epitaxial-Planar-Silizium-Diode mit kurzer Erholzeit.

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Produktdetails

 
Teilenummer | RFNL5BGE6STL
Status | Empfohlen
Gehäuse | TO-252
Einheitenmenge | 2500
Minimale Gehäusemenge | 2500
Gehäusetyp | Taping
RoHS | Ja

Spezifikationen:

Grade

Standard

Configuration

Single

Package Code

TO-252 (DPAK)

Package(JEITA)

SC-63

Package Size[mm]

6.6x10.0 (t=2.2)

Mounting Style

Surface mount

Number of terminal

3

VRM[V]

600

Reverse Voltage VR[V]

600

Average Rectified Forward Current IO[A]

5.0

IFSM[A]

50.0

Forward Voltage VF(Max.)[V]

1.3

IF @ Forward Voltage [A]

5.0

Reverse Current IR(Max.)[mA]

0.01

VR @ Reverse Current [V]

600

trr(Max.)[ns]

60

IF @ trr [mA]

500

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

Eigenschaften:

  • Ultra low forward voltage
  • High current overload capacity

Ressourcen entwerfen

 

Technische Artikel

Schematic Design & Verification

  • Method for Monitoring Switching Waveform
  • Importance of Probe Calibration When Measuring Power: Deskew
  • Impedance Characteristics of Bypass Capacitor

Thermal Design

  • Notes for Temperature Measurement Using Thermocouples
  • Two-Resistor Model for Thermal Simulation
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction
  • What is a Thermal Model? (Diode)
  • Measurement Method and Usage of Thermal Resistance RthJC
  • Precautions When Measuring the Rear of the Package with a Thermocouple

Design Tools

Characteristics Data

  • RFNL5BGE6S ESD Data

Packaging & Qualität

Package Information

  • Taping Information
  • Anti-Whisker formation

Environmental Data

  • About Non-use SVHC under Reach Regulation : Please contact us by filling in the form.
  • Compliance of the RoHS / ELV directive

Export Information

  • About Export Regulations