YQ20NL10SD (In Entwicklung)
Trench MOS Structure, 100V, 20A, LPDL, Highly Efficient SBD
YQ20NL10SD
YQ20NL10SD (In Entwicklung)
Trench MOS Structure, 100V, 20A, LPDL, Highly Efficient SBD
The YQ20NL10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.
Data Sheet
* Dieses Produkt entspricht der Standardqualifizierung.
Für den Automobilbereich kontaktieren Sie bitte unser Sales-Team.
Für den Automobilbereich kontaktieren Sie bitte unser Sales-Team.
Produktdetails
Teilenummer | YQ20NL10SDTL
Status |
In Entwicklung
Gehäuse |
LPDL
Einheitenmenge | 1000
Minimale Gehäusemenge | 1000
Gehäusetyp | Taping
RoHS |
Ja
Spezifikationen:
Configuration
Single
Package Code
TO-263L
Number of terminal
3
VRM[V]
100
Reverse Voltage VR[V]
100
Average Rectified Forward Current IO[A]
20
IFSM[A]
150
Forward Voltage VF(Max.)[V]
0.96
IF @ Forward Voltage [A]
20
Reverse Current IR(Max.)[mA]
0.07
VR @ Reverse Current[V]
100
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Package Size [mm]
10.1x15.1 (t=4.7)
Eigenschaften:
- High reliability
- Power mold type
- Low VF and low IR
- Low capacitance
_IGBT.png)
