YQ30NL10CD (In Entwicklung)
Trench MOS Structure, 100V, 30A, LPDL, Highly Efficient SBD
YQ30NL10CD
YQ30NL10CD (In Entwicklung)
Trench MOS Structure, 100V, 30A, LPDL, Highly Efficient SBD
The YQ30NL10CD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.
Data Sheet
* Dieses Produkt entspricht der Standardqualifizierung.
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Produktdetails
Teilenummer | YQ30NL10CDTL
Status |
In Entwicklung
Gehäuse |
LPDL
Einheitenmenge | 1000
Minimale Gehäusemenge | 1000
Gehäusetyp | Taping
RoHS |
Ja
Spezifikationen:
Configuration
C-Common
Package Code
TO-263L
Number of terminal
3
VRM[V]
100
Reverse Voltage VR[V]
100
Average Rectified Forward Current IO[A]
30
IFSM[A]
150
Forward Voltage VF(Max.)[V]
0.72
IF @ Forward Voltage [A]
15
Reverse Current IR(Max.)[mA]
0.1
VR @ Reverse Current[V]
100
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Package Size [mm]
10.1x15.1 (t=4.7)
Eigenschaften:
- High reliability
- Power mold type
- Cathode common dual type
- Low VF and low IR
- Low capacitance
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