YQ5LAM10D (Neues Produkt)
Trench MOS Structure, 100V, 5A, PMDTM, Highly Efficient SBD
YQ5LAM10D
YQ5LAM10D (Neues Produkt)
Trench MOS Structure, 100V, 5A, PMDTM, Highly Efficient SBD
The YQ5LAM10D is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.
Data Sheet
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Produktdetails
Spezifikationen:
Configuration
Single
Package Code
SOD-128
Mounting Style
Surface mount
Number of terminal
2
VRM[V]
100
Reverse Voltage VR[V]
100
Average Rectified Forward Current IO[A]
5
IFSM[A]
80
Forward Voltage VF(Max.)[V]
0.73
IF @ Forward Voltage [A]
5
Reverse Current IR(Max.)[mA]
0.03
VR @ Reverse Current[V]
100
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
2.5x4.7 (t=1.05)
Eigenschaften:
- High reliability
- Small power mold type
- Low VF and low IR
- Low capacitance
