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FAQ's
  • Welche Faktoren müssen bei der Parallelschaltung von SiC-MOSFETs berücksichtigt werden?
    • - The power wiring and other considerations must be equalized to prevent an unbalanced condition regarding The chip temperature and current
      - Not matching The switch timing may result in damage due to overcurrent
      - If Vgs(on) is Not sufficiently high, Ron temperature characteristics may become negative, leading to current concentration in certain chips and possible destruction due to thermal runaway
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