• Welche Faktoren müssen bei der Reihenschaltung von SiC-MOSFETs berücksichtigt werden?
    • - The ground isolation of The upper device can only guarantee The dielectric withstand voltage
      - A floating power supply is required for series gate voltages
      - When connected in series, since The temperature coefficient of The on resistance is positive, in order to prevent thermal runaway it is necessary to consider sufficient derating
      - taking into account product variations
      - When used as A single high voltage switch in series it is recommended to implement appropriate voltage dividing measures such as inserting A large resistance in parallel
      - The switch timing must be matched to prevent destruction due to breakdown voltage
    • Produkte: Silicon-carbide (SiC) Power Devices , SiC MOSFETs , SiC MOSFET Bare Die