ROHM Product Detail

Letztmalig zu kaufen BM3G007MUV-LB
GaN HEMT Endstufen-IC mit Nano Cap™ und EcoGaN™, 650V 70mΩ 2MHz

Die Einstellung von Produkten (EOL) wurde angekündigt.

Produktdetails

 
Teilenummer | BM3G007MUV-LBE2
Gehäuse | VQFN046V8080
Gehäusetyp | Taping
Einheitenmenge | 1000
Minimale Gehäusemenge | 1000
RoHS | Ja

Spezifikationen:

Vin (Min.)[V]

-0.6

Vin (Max.)[V]

30

Operating Current@130 kHz(Typ) [μA]

650

Quiescent Current (Typ) [μA]

180

Switching Frequency(Max)[MHz]

2

Turn-on Delay Time(Typ)[ns]

12

Turn-off Delay Time(Typ)[ns]

15

Temperature (Min.)[°C]

-40

Temperature (Max.)[°C]

105

ON State Resistance(Typ)[mΩ]

70

Package Size [mm]

8.0x8.0 (t=1.0)

Application

Networking, Server

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Min.)[°C]

150

Eigenschaften:

  • Nano Cap™ Integrated Output Selectable 5V LDO
  • Long Time Support Product for Industrial Applications
  • Wide Operating Range for VDD Pin Voltage
  • Wide Operating Range for IN Pin Voltage
  • Low VDD Quiescent and Operating Current
  • Low Propagation Delay
  • High dv/dt Immunity
  • Adjustable Gate Drive Strength
  • Power Good Signal Output
  • VDD UVLO Protection
  • Thermal Shutdown Protection

Referenzdesign / Anwendungsevaluierungskit

 
    • Evaluation Board - BM3G007MUV-EVK-001
    • This evaluation board outputs an isolated voltage of 12 V from an input of 90 Vac to 264 Vac, and the maximum output current is 8.3 A. It was developed mainly as a power supply for adapters. The average efficiency is 90.7% when VIN = 230V. The BM3G007MUV is GaN HEMT (650 V 70 mΩ), with integrated driver and protection circuitry. QR controllers for AC/DC power supplies use BM1Q021FJ.

  • User's Guide
    • Evaluation Board - BM3G007MUV-EVK-003
    • The BM3G007MUV-EVK-003 evaluation board consists of the BM3G007MUV (GaN FET (650V 70mΩ), integrated driver and protection circuit) and A board on which peripheral components are mounted. This IC is designed to adapt major exist controllers, so that it also can be used to replace the traditional discrete power switches, such as super junction MOSFET.

  • User's Guide

Produktvideo & Katalog

 
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