BM3G015MUV-LB
GaN HEMT Endstufen-IC mit Nano Cap™, EcoGaN™, 650V 150mΩ 2MHz
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BM3G015MUV-LB
GaN HEMT Endstufen-IC mit Nano Cap™, EcoGaN™, 650V 150mΩ 2MHz
Die Einstellung von Produkten (EOL) wurde angekündigt.
Produktdetails
Spezifikationen:
Vin (Min.)[V]
-0.6
Vin (Max.)[V]
30
Operating Current@130 kHz(Typ) [μA]
450
Quiescent Current (Typ) [μA]
150
Switching Frequency(Max)[MHz]
2
Turn-on Delay Time(Typ)[ns]
11
Turn-off Delay Time(Typ)[ns]
15
Temperature (Min.)[°C]
-40
Temperature (Max.)[°C]
105
ON State Resistance(Typ)[mΩ]
150
Package Size [mm]
8.0x8.0 (t=1.0)
Application
Networking, Server
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Min.)[°C]
150
Eigenschaften:
- Nano Cap™ Integrated Output Selectable 5V LDO
- Long Time Support Product for Industrial Applications
- Wide Operating Range for VDD Pin Voltage
- Wide Operating Range for IN Pin Voltage
- Low VDD Quiescent and Operating Current
- Low Propagation Delay
- High dv/dt Immunity
- Adjustable Gate Drive Strength
- Power Good Signal Output
- VDD UVLO Protection
- Thermal Shutdown Protection
Referenzdesign / Anwendungsevaluierungskit
-
- Evaluation Board - BM3G015MUV-EVK-003
The BM3G015MUV-EVK-003 evaluation board consists of the BM3G015MUV (GaN FET (650V 150mΩ), integrated driver and protection circuit) and A board on which peripheral components are mounted. This IC is designed to adapt major exist controllers, so that it also can be used to replace the traditional discrete power switches, such as super junction MOSFET.
Produktvideo & Katalog
