GNP2130TEC-Z
EcoGaN™, 650V 14.5A DFN8080CK, E-mode Gallium-Nitrid (GaN) HEMT
Für neue Designs nicht empfohlen
GNP2130TEC-Z
EcoGaN™, 650V 14.5A DFN8080CK, E-mode Gallium-Nitrid (GaN) HEMT
Produkte, die nicht für neue Designs verwendet werden können (Nicht empfohlen für Designabweichungen).
Produktdetails
Spezifikationen:
VDS [V]
650
IDS [A]
14.5
VGS Rating [V]
6.5
RDS(on) [mΩ]
130
Qg [nC]
2.8
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Dimensions [mm]
8.0x8.0 (t=1.0)
Eigenschaften:
- 650V E-mode GaN HEMT
- 130mΩ Widerstand
- 2.8nC Gate-Ladung
Referenzdesign / Anwendungsevaluierungskit
-
- Evaluation Board - GNP2130TEC-1-EVK-001
In order to take advantage of good switching performance and heat dissipation for GaN power devices, it is necessary to evaluate them under various drive conditions, but these evaluations are not easy. The EVK has been released to evaluate the switching performance.
