ROHM Product Detail

GNP2130TEC-Z (Neues Produkt)
EcoGaN™, 650V 14.5A DFN8080CK, E-mode Gallium-Nitride(GaN) HEMT

GNP2130TEC-Z is an 650V GaN HEMT which has achieved the industry's highest class FOM (Ron*Ciss、Ron*Coss). It is a product of the EcoGaN™ series that contributes to power conversion efficiency and size reduction by making the best use of low ON resistance and high-speed switching. ESD protection function is built in for high-reliability design. In addition, the highly versatile packages provide excellent heat dissipation and facilitates mounting.

Looking for the Gate Driver inspiring GaN HEMT performance? → Gate Drivers for GaN

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Produktdetails

 
Teilenummer | GNP2130TEC-ZE2
Status | Empfohlen
Gehäuse | DFN8080CK
Gehäusetyp | Taping
Einheitenmenge | 3500
Minimale Gehäusemenge | 3500
RoHS | Ja

Spezifikationen:

VDS [V]

650

IDS [A]

14.5

VGS Rating [V]

6.5

RDS(on) [mΩ]

130

Qg [nC]

2.8

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

Dimensions [mm]

8.0x8.0 (t=1.0)

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Eigenschaften:

  • 650V E-mode GaN HEMT
  • 130mΩ Resistance
  • 2.8nC Gate Charge

Referenzdesign / Anwendungsevaluierungskit

 
    • Evaluation Board - GNP2130TEC-1-EVK-001
    • In order to take advantage of good switching performance and heat dissipation for GaN power devices, it is necessary to evaluate them under various drive conditions, but these evaluations are not easy. The EVK has been released to evaluate the switching performance.

  • User's Guide

Produktvideo & Katalog

 
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