RGE60TS65DG (Neues Produkt)
5μs Short-Circuit Tolerance, 650V 30A, FRD Built-in, TO-247GE, Field Stop Trench IGBT
RGE60TS65DG (Neues Produkt)
5μs Short-Circuit Tolerance, 650V 30A, FRD Built-in, TO-247GE, Field Stop Trench IGBT
RGE60TS65DG is IGBT featuring low switching loss and low conduction loss. It is ideal for Power Conditioner and Welder and General Inverter and UPS
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Produktdetails
Spezifikationen:
Series
E: For inverter (tsc 5µs)
VCES [V]
650
IC(100°C)[A]
30
VCE(sat) (Typ.) [V]
1.65
tf(Typ.) [ns]
78
tsc(Min.) [us]
5
Built-in Diode
FRD
Pd [W]
166
BVCES (Min.)[V]
650
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
20.95x15.94 (t=5.22)
Eigenschaften:
- Low Collector - Emitter Saturation Voltage
- Low Switching Loss
- Short Circuit Withstand Time 5μs
- Built in Very Fast & Soft Recovery FRD
- Pb - free Lead Plating ; RoHS Compliant
