MH2107WZ
650V 60A, FRD Bare Die für IGBT-Modul

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Produktdetails

 
Teilenummer | MH2107WZ
Status | Aktiv
Gehäuse |
Einheitenmenge |
Minimale Gehäusemenge |
Gehäusetyp |
RoHS | Ja

Spezifikationen:

Series

FRD: Fast recovery diode

VRM [V]

650

IF(Nominal) [A]

60

VF(Typ.) [V]

1.45

Eigenschaften:

  • Light Punch Through Type
  • Low Forward Voltage
  • Very Fast & Soft Recovery
  • Low Recovery Loss

Ressourcen entwerfen

 

Technische Artikel

Schematic Design & Verification

  • Calculation of Power Dissipation in Switching Circuit
  • Method for Monitoring Switching Waveform
  • Importance of Probe Calibration When Measuring Power: Deskew
  • Impedance Characteristics of Bypass Capacitor

Thermal Design

  • Notes for Temperature Measurement Using Thermocouples
  • Two-Resistor Model for Thermal Simulation
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction
  • What is a Thermal Model? (IGBT)
  • Measurement Method and Usage of Thermal Resistance RthJC
  • Precautions When Measuring the Rear of the Package with a Thermocouple

Packaging & Qualität

Package Information

  • Moisture Sensitivity Level
  • Anti-Whisker formation

Environmental Data

  • About Flammability of Materials
  • Compliance of the ELV directive
  • Report of SVHC under REACH Regulation

Export Information

  • About Export Administration Regulations (EAR)