ROHM Product Detail

R6009KND3
Nch 600V 9A, TO-252 (DPAK), High-speed switching Power MOSFET

R6009KND3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.

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Produktdetails

 
Teilenummer | R6009KND3TL1
Status | Empfohlen
Gehäuse | TO-252 (TL1)
Gehäusetyp | Taping
Einheitenmenge | 2500
Minimale Gehäusemenge | 2500
RoHS | Ja

Spezifikationen:

Package Code

TO-252 (DPAK)

JEITA Package

SC-63

Applications

Switching

Number of terminal

3

Polarity

Nch

Drain-Source Voltage VDSS[V]

600

Drain Current ID[A]

9

RDS(on)[Ω] VGS=10V(Typ)

0.5

RDS(on)[Ω] VGS=Drive (Typ)

0.5

Total gate charge Qg[nC]

16.5

Power Dissipation (PD)[W]

94

Drive Voltage[V]

10

Trr (Typ)[ns]

345

Mounting Style

Surface mount

Storage Temperature (Min)[℃]

-55

Storage Temperature (Max)[℃]

150

Package Size [mm]

9.9x6.6 (t=2.4)

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Eigenschaften:

  • Low on-resistance
  • Ultra fast switching speed
  • Parallel use is easy
  • Pb-free plating ; RoHS compliant
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