R6010YND3 (Neues Produkt)
600V 10A TO-252, High-speed switching Power MOSFET

R6010YND3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.

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Produktdetails

 
Teilenummer | R6010YND3TL1
Status | Empfohlen
Gehäuse | TO-252
Einheitenmenge | 2500
Minimale Gehäusemenge | 2500
Gehäusetyp | Taping
RoHS | Ja

Spezifikationen:

Package Code

TO-252 (DPAK)

JEITA Package

SC-63

Number of terminal

3

Polarity

Nch

Drain-Source Voltage VDSS[V]

600

Drain Current ID[A]

10

RDS(on)[Ω] VGS=10V(Typ.)

0.35

RDS(on)[Ω] VGS=12V(Typ.)

0.324

RDS(on)[Ω] VGS=Drive (Typ.)

0.35

Total gate charge Qg[nC]

15

Power Dissipation (PD)[W]

92

Drive Voltage[V]

10

Trr (Typ.)[ns]

230

Mounting Style

Surface mount

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

Package Size [mm]

6.6x10.0 (t=2.4)

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Eigenschaften:

  • Low on-resistance
  • Fast switching
  • Drive circuits can be simple
  • Pb-free lead plating; RoHS compliant
  • Halogen free mold compound
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